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Yuqi WANG

Wang Yuqi
Born in 1954, obtained his Bachelor degree from Beijing University of Technology in 1982, Master degree from the Institute of Solid State Physics, Chinese Academy of Sciences in 1985, and PhD. Degree from Columbia University in 1993.
From 1985 to 1988, he was with Beijing Normal University as a lecturer. During the period, he worked on the high power silicon microwave bipolar transistors, and realized transistors output power of 25 W at 4 GHz, which was the best results in China.  
From 1994 to 2004, he was with the Hong Kong University of Science & Technology,
working on semiconductor quantum structures and molecular beam epitaxy. In 2001, he was selected in Hundred Talents Program, and joined the Institute of Solid State Physics in 2004, working on wide gap semiconductor materials and devices. In the past 20 years, he published more than 100 papers in prestigious journals, and made important contributions in 2DEG-emitter HBTs, II-VI  semiconductor laser diodes, InAs channel HFETs, ultra-sensitive phototransistors, high breakdown voltage heterostructural Schottky diodes. 

   
 
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